1 of 6 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rfcm2680 input output current setting v+ rfcm2680 45mhz to 1003mhz gaas/gan power doubler module the rfcm2680 is a power doubler amplifier smd module. the part employs gaas phemt die and gan hemt die, has high ou tput capability, and is operated from 45mhz to 1003mhz. it provides excellent li nearity and superior return loss perfor- mance with low noise and optimal reliability. dc current of the device can be externally adjusted for optimum distortion perfor- mance versus power consumption over a wide range of output level. features ? excellent linearity ? superior return loss performance ? extremely low distortion ? optimal reliability ? low noise ? unconditionally stable under all terminations ? extremely high output capability ? 22.5db min. gain at 1003mhz ? 450ma max. at 24vdc applications ? 45mhz to 1003mhz catv amplifier systems ds120518 ?? package: 9-pin, 9.0mm x 8.0mm x 1.375mm rfcm2680 45mhz to 1003mhz gaas/gan power dou- bler module RFCM2680SB sample bag with 5 pieces rfcm2680sr 7? reel with 100 pieces rfcm2680tr7 7? reel with 500 pieces rfcm2680tr13 13? reel with 1000 pieces rfcm2680pcba-410 fully assembled evaluation board
2 of 6 rfcm2680 ds120518 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit rf input voltage (single tone; on evaluation board) 60 dbmv dc supply over-voltage (5 minutes) 30 v storage temperature -40 to +100 c operating mounting base temperature -30 to +100 c l parameter specification unit condition min. typ. max. overall v+ = 24v; t mb = 30c; z s = z l = 75 ? ; i dc = i dc typical power gain 21.0 21.5 22.0 db f = 45mhz 22.5 23.0 24.0 db f = 1003mhz slope [1] 1.0 1.5 2.5 db f = 45mhz to 1003mhz flatness of frequency response 1 db f = 45mhz to 1003mhz (peak to valley) input return loss 20 db f = 45mhz to 320mhz 19 db f = 320mhz to 640mhz 18 db f = 640mhz to 870mhz 16 db f = 870mhz to 1003mhz output return loss 20 db f = 45mhz to 320mhz 19 db f = 320mhz to 640mhz 18 db f = 640mhz to 870mhz 17 db f = 870mhz to 1003mhz noise figure 3.0 4.0 db f = 50mhz to 1003mhz output p1db 32 dbm output ip3 49 dbm 6mhz tone spacing at 16dbm/tone total current consumption (dc) 430.0 450.0 ma distortion data 40mhz to 550mhz v+ = 24v; t mb = 30c; z s = z l = 75 ? ; i dc = i dc typical ctb -73 -69 dbc v o = 60dbmv at 1003mhz, 18db extrapolated tilt, 79 analog channels plus 75 digital chan- nels (-6db offset)[2][4] xmod -66 -61 dbc cso -75 -65 dbc cin 55 58 db distortion data 40mhz to 550mhz v+ = 24v; t mb = 30c; z s = z l = 75 ? ; i dc = 370ma ctb -73 dbc v o = 57dbmv at 1003mhz, 18db extrapolated tilt, 79 analog channels plus 75 digital chan- nels (-6db offset)[3][4] xmod -67 dbc cso -76 dbc cin 59 db [1] the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. [2] 79 analog channels, ntsc frequency raster: 55.25mhz to 547. 25mhz, +42dbmv to +51.4dbmv tilted output level, plus 75 digital channels, -6db offset relative to the equivalent analog carrier. [3] 79 analog channels, ntsc frequency raster: 55.25mhz to 547. 25mhz, +39dbmv to +48.4dbmv tilted output level, plus 75 digital channels, -6db offset relative to the equivalent analog carrier. [4] composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite tripl e beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (se lective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is defined by ansi/scte 17 (test procedure for carrier to noise). caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 6 rfcm2680 ds120518 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . current adjustment using resistor r3 the rfcm2680 can be operated over a wide range of current to provide optimal required performance with minimum current consumption. changing the value of resistor r3 on applicat ion circuit allows a variation of the current between 430ma and 330ma (typ.). recommended current consumpt ion is between 370ma to 430ma. within this range, gain change less than 0.2db and the noise figure changes less than 0.1db. change of distortion performance over current test conditions: v+= 24v; t mb = 30c; z s = z l = 75 ? ; v o = 60dbmv at 1003mhz, 18db extrapolated tilt, 79 anal og channels plus 75 digital channels (-6db offset) device current [ma], typical r3 [ ? ] 430 1500 410 1400 390 1300 370 1200 350 1100 330 1000 v+ = 24v; t mb = 30c; z s = z l = 75 ? 320 340 360 380 400 420 440 1000 1100 1200 1300 1400 1500 i[ma] r3[] rfcm2680currentversusresistorr3 320 340 360 380 400 420 440 01234567891011 i[ma] ctbandcindegradation[db] worstcasedistortiondegradation overdevicecurrent,typicalvalues ctb cin
4 of 6 rfcm2680 ds120518 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . application circuit evaluation board layout note: the ground plane of the rfcm2680 module should be soldered onto a board equipped with as many thermal vias as possible. underneath this thermal via array a heat sink with thermal grea se needs to be placed which is able to dissipate the complete module dc power (up to 10.4w). in any case the module backside temperature should not exceed 100c. c8 4.7nf c3 4.7nf r5 470 ? r6 470 ? c6 4.7nf c5 1.2pf c4 1.2pf r2 3.9k ? r3 1.5k ? r4 10 ? c2 4.7nf c10 0.5pf d2 mm3z5v6t1 r1 10k ? d1 tgl34-33a c1 220pf c7 4.7nf u1 rfcm2680 1 2 3 4 9 8 7 6 5 fb1 bead 60 ? t3 rfxf0009 t1 rfxf0006 t2 rfxf0008 v+ gnd rf in rf out r7 dni r8 dni r9 dni c9 dni c12 dni r10 dni r11 dni r12 dni c11 0.5pf c14 dni c13 dni
5 of 6 rfcm2680 ds120518 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin configuration component chart component type value quantity designator comment evaluation board rfcm2680pcba-410 1 capacitor 220 pf 1 c1 capacitor 4.7 nf 5 c2, c3, c6, c7, c8 capacitor 1.2 pf 2 c4, c5 capacitor dni 4 c9, c12, c13, c14 optional to improve matching in application capacitor 0.5pf 2 c10, c11 resistor 10k ? 1r1 resistor 3.9k ? 1r2 resistor 1.5k ? 1r3 resistor 10 ? 1r4 resistor 470 ? 2r5, r6 resistor dni 6 r7-r12 optional to improve matching in application impedance bead 60 ? at 100mhz 1 fb1 transient voltage suppressor diode tgl34-33a 1 d1 zener diode mm3z5v6t1g 1 d2 transformer rfxf0006 1 t1 transformer rfxf0008 1 t2 transformer rfxf0009 1 t3 dut rfcm2680 1 u1 pin names and description pin name description 1rf in+ rf amp positive input 2, 3, 6, 8 gnd ground pins 4rf in- rf amp negative input 5rf out- rf amp negative output 7v+ supply voltage, +24v 9rf out+ rf amp positive output 1 2 3 4 9 8 7 6 5 rf in + gnd gnd rf in - rf out + gnd v+ gnd rf out - gnd
6 of 6 rfcm2680 ds120518 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing dimensions in millimeters 8.0000.100 pin 1 indicator rfcm2680 1.3750.075 0.275 ref molding cap substrate 9.0000.100 a data code (year/week) yyww trace code a a a a a a a a a= 0.600 x 0.600 mm 0.000 0.650 0.650 2x 2.000 2x 2.000 3.700 3.700 1.000 1.000 0.000 3.400 3.400 4x 4.100 5x 4.100 pin1
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